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A MOS capacitor has a P+ polysilicon gate and an N-type body doped with phosphorus at a concentration of 9.4 x10^16 /cm^3. If this capacitor is operating in depletion with a depletion region width of 34 nanometers, then what is the surface potential in millivolts? Use: εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6 x 10^−19 C. For this question, be sure to give your answer to the nearest millivolt!

A MOS capacitor has a P+ polysilicon gate and an N-type body doped with phosphorus at a concentration of 9.4 x10^16 /cm^3. If this capacitor is operating in depletion with a depletion region width of 34 nanometers, then what is the surface potential in millivolts? Use: εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6 x 10^−19 C. For this question, be sure to give your answer to the nearest millivolt!

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A MOS capacitor has a P + polysilicon gate and an N -type body doped with phosphorus at a concentration of 9.4 x 10 ∧ 16 / c m ∧ 3 . If this capacitor is operating in depletion with a depletion region width of 34 nanometers, then what is the surface potential in millivolts? Use: ε s = 11.7 , ε 0 x = 3.9 , ε 0 = 8.854 × 10 ∧ − 14 F / c m , and q = 1.6 x 10 ∧ − 19 C. For this question, be sure to give your answer to the nearest millivolt!

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