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A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 5.9×10^17 /cm^3. The thickness of the gate oxide is 41 angstroms. If this capacitor is operating in depletion with a depletion region width of 37 nanometers, then what is the voltage across the oxide in millivolts? Use: εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6×10^−19 C. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: 415

A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 5.9×10^17 /cm^3. The thickness of the gate oxide is 41 angstroms. If this capacitor is operating in depletion with a depletion region width of 37 nanometers, then what is the voltage across the oxide in millivolts? Use: εs = 11.7, εox = 3.9, ε0 = 8.854×10^−14 F/cm, and q = 1.6×10^−19 C. For this question, be sure to give your answer to the nearest millivolt! Answer: The correct answer is: 415

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A MOS capacitor has an N+ polysilicon gate and a P-type body doped with boron at a concentration of 5.9 × 10 ∧ 17 / c m ∧ 3 . The thickness of the gate oxide is 41 angstroms. If this capacitor is operating in depletion with a depletion region width of 37 nanometers, then what is the voltage across the oxide in millivolts? Use: ε s = 11.7 , ε 0 x = 3.9 , ε 0 = 8.854 × 10 ∧ − 14 F / c m , and q = 1.6 × 10 ∧ − 19 C . For this question, be sure to give your answer to the nearest millivolt!
Answer: ◻ The correct answer is: 415

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