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A MOS capacitor is at 300 K on a Si substrate. The substrate is doped with 3×1015 cm−3 phosphorus atoms. What is the value of the semiconductor (depletion) charge at strong inversion? 1.6×10−11 C/cm2 −1.6×10−11 C/cm2 −2.56×10−8 C/cm2 2.56×10−8 C/cm2

A MOS capacitor is at 300 K on a Si substrate. The substrate is doped with 3×1015 cm−3 phosphorus atoms. What is the value of the semiconductor (depletion) charge at strong inversion? 1.6×10−11 C/cm2 −1.6×10−11 C/cm2 −2.56×10−8 C/cm2 2.56×10−8 C/cm2

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A MOS capacitor is at 300 K on a Si substrate. The substrate is doped with 3 × 10 15 c m − 3 phosphorus atoms. What is the value of the semiconductor (depletion) charge at strong inversion? 1.6 × 10 − 11 C / c m 2 − 1.6 × 10 − 11 C c m 2 − 2.56 × 10 − 8 C / c m 2 2.56 × 10 − 8 C c m 2

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