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A MOS capacitor is fabricated by using Metal layer deposited on top of 20 nm thick SiO2 oxide layer on top of p-type silicon with doping concentration of NA = 1×1014 cm−3. Dielectric coefficients of silicon and oxide layer is given as KS = 11.8, KO = 3.9, ε0 = 8.86×10−14 F/cm. Calculate the threshold voltage required to create inversion layer. (Assume flat band approximation is valid).

A MOS capacitor is fabricated by using Metal layer deposited on top of 20 nm thick SiO2 oxide layer on top of p-type silicon with doping concentration of NA = 1×1014 cm−3. Dielectric coefficients of silicon and oxide layer is given as KS = 11.8, KO = 3.9, ε0 = 8.86×10−14 F/cm. Calculate the threshold voltage required to create inversion layer. (Assume flat band approximation is valid).

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A MOS capacitor is fabricated by using Metal layer deposited on top of 2 0 n m thick S i O 2 oxide layer on top of p-type silicon with doping concentration of N A = 1 × 10 14 c m − 3 . Dielectric coefficients of silicon and oxide layer is given as K S = 11.8 , K O = 3.9 , ε 0 = 8.86 × 10 − 14 F / c m . Calculate the threshold voltage required to create inversion layer. (Assume flat band approximation is valid).

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