A MOSFET amplifier can be simplified as the equivalent circuit model shown below (very similar to the BJT version), where gm (transconductance) and RL (load resistor) can be designed to have the desired gain of the amplifier. (a) Determine the voltage gain of this MOS amplifier (Vout /Vin )?(10/10) (b) Design the load resistor RL to achieve a voltage gain ( Vout /Vin ) of 60 dB if gm = 25 mA/V.(10/100) (b) Design the transconductance gm to achieve a voltage gain (Vout /Vin ) of 40 dB if RL = 1.2 Kohm.(10/100)

A MOSFET amplifier can be simplified as the equivalent circuit model shown below (very similar to the BJT version), where gm (transconductance) and RL (load resistor) can be designed to have the desired gain of the amplifier. (a) Determine the voltage gain of this MOS amplifier (Vout /Vin )?(10/10) (b) Design the load resistor RL to achieve a voltage gain ( Vout /Vin ) of 60 dB if gm = 25 mA/V.(10/100) (b) Design the transconductance gm to achieve a voltage gain (Vout /Vin ) of 40 dB if RL = 1.2 Kohm.(10/100)

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A MOSFET amplifier can be simplified as the equivalent circuit model shown below (very similar to the BJT version), where gm (transconductance) and RL (load resistor) can be designed to have the desired gain of the amplifier. (a) Determine the voltage gain of this MOS amplifier (Vout /Vin )?(10/10) (b) Design the load resistor RL to achieve a voltage gain ( Vout /Vin ) of 60 dB if gm = 25 mA/V.(10/100) (b) Design the transconductance gm to achieve a voltage gain (Vout /Vin ) of 40 dB if RL = 1.2 Kohm.(10/100)

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