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A MOSFET has two modes of operations. For the enhancement mode NMOS and PMOS, VGS is required to turn on the device whereas VGS is not needed to turn on the device for the depletion mode NMOS and PMOS. Please specify what is a mode of a MOSFET shown below (a)-(d), i. e. enhancement mode NMOS, enhancement mode PMOS, depletion mode NMOS, and depletion mode PMOS.

A MOSFET has two modes of operations. For the enhancement mode NMOS and PMOS, VGS is required to turn on the device whereas VGS is not needed to turn on the device for the depletion mode NMOS and PMOS. Please specify what is a mode of a MOSFET shown below (a)-(d), i. e. enhancement mode NMOS, enhancement mode PMOS, depletion mode NMOS, and depletion mode PMOS.

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A MOSFET has two modes of operations. For the enhancement mode NMOS and PMOS, V G S is required to turn on the device whereas V GS is not needed to turn on the device for the depletion mode NMOS and PMOS. Please specify what is a mode of a MOSFET shown below (a)-(d), i.e. enhancement mode NMOS, enhancement mode PMOS, depletion mode NMOS, and depletion mode PMOS. (a) so- 69 T [ I b ∘ (b) (c) (d) so- 69 72 + I b ∘

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A double pulse test circuit, as shown below, has a DC-link voltage, VDC = 100 V and the inductor has a value of L = 200 μH. At t = 0, a gate-source voltage, vgs = 20 V is applied to the MOSFET, which is enough to turn it on. The vgs = 20 V is applied for the time period Ton after which it is turned down to vgs = 0 V for the time period Tof. There is no initial current stored in the inductor prior to t = 0. Describe what is the purpose of the double pulse test circuit, and what information can be derived from the use of the circuit? Explain the purpose of the diode in the double pulse test circuit, and what happens if it is removed? Sketch the currents iL, is and iD as a function of time. Calculate the time Ton required for the inductor current (iL) to be 20 A at the end of t = Ton Calculate how much energy is stored in the inductor L at t = Ton The MOSFET has a thermal resistance junction-to-case, Rsc = 0.8 K/W, case-to-heatsink Rcs = 1.2 K/W and heatsink-toambient RsA = 4 K/W. For a maximum junction temperature of TJ max = 175∘C and ambient temperature TA = 50∘C, what is the maximum allowed power dissipation ?

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