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A PMOS FET circuit is shown below. The transistor is biased using a resistive voltage divider formed by RG1 and RG2. The transistor has kp = 2 mA/V2 and Vt,p = −1V. The transistor is to be biased with ISD0 = 1 mA. The supply voltages are ±5 V. a) Calculate the values of RG1 and RG2 if the current flowing through them is 10 μA. b) Calculate the actual source-to-drain current ISD if the drain resistor RD = 3 kΩ and the MOSFET's channel length parameter λ = 0.04 V−1.

A PMOS FET circuit is shown below. The transistor is biased using a resistive voltage divider formed by RG1 and RG2. The transistor has kp = 2 mA/V2 and Vt,p = −1V. The transistor is to be biased with ISD0 = 1 mA. The supply voltages are ±5 V. a) Calculate the values of RG1 and RG2 if the current flowing through them is 10 μA. b) Calculate the actual source-to-drain current ISD if the drain resistor RD = 3 kΩ and the MOSFET's channel length parameter λ = 0.04 V−1.

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A PMOS FET circuit is shown below. The transistor is biased using a resistive voltage divider formed by RG1 and RG2. The transistor has kp = 2 mA/V2 and Vt,p = −1V. The transistor is to be biased with ISD0 = 1 mA. The supply voltages are ±5 V. a) Calculate the values of RG1 and RG2 if the current flowing through them is 10 μA. b) Calculate the actual source-to-drain current ISD if the drain resistor RD = 3 kΩ and the MOSFET's channel length parameter λ = 0.04 V−1.

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