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A Pseudo-NMOS inverter is realized in a 0.13 - um fabrication process technology. It has VDD = 1.2 V, Vtn = Vtp = 0.4 V : (a) Specify the value of VOH. (Ans. 1.2 V) (b) If kp = 100 uA/V2, solve for ID of the closed state of the switch. (Ans. 32 uA ) (c) Calculate the average power dissipation assuming that the inverter life-time is divided equally between its two states. (Ans. 19.2 uW ) (d) If V0L is required to be 0.1 V, find the corresponding kn and the transconductance ratio r. (Ans. 400 uA/V2, 4)

A Pseudo-NMOS inverter is realized in a 0.13 - um fabrication process technology. It has VDD = 1.2 V, Vtn = Vtp = 0.4 V : (a) Specify the value of VOH. (Ans. 1.2 V) (b) If kp = 100 uA/V2, solve for ID of the closed state of the switch. (Ans. 32 uA ) (c) Calculate the average power dissipation assuming that the inverter life-time is divided equally between its two states. (Ans. 19.2 uW ) (d) If V0L is required to be 0.1 V, find the corresponding kn and the transconductance ratio r. (Ans. 400 uA/V2, 4)

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A Pseudo-NMOS inverter is realized in a 0.13 - um fabrication process technology. It has VDD = 1.2 V, Vtn = Vtp = 0.4 V : (a) Specify the value of VOH. (Ans. 1.2 V) (b) If kp = 100 uA/V2, solve for ID of the closed state of the switch. (Ans. 32 uA ) (c) Calculate the average power dissipation assuming that the inverter life-time is divided equally between its two states. (Ans. 19.2 uW ) (d) If V0L is required to be 0.1 V, find the corresponding kn and the transconductance ratio r. (Ans. 400 uA/V2, 4)

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