Question

Notify Me Bookmark

Consider an NMOS, as shown in Fig. 2, VDD = 3 V, Vtno = 0.6 V, μnCoxW/L = 40 μA/V2, γn = 0.5 V1/2 , ϕf = 0.3 V, and λn = 0.015 1/V. The initial value of V2 is 0 V, i.e., V2(t = 0) = 0 V. Find V2(t >> 0) in the following cases under DCSS condition: (a) V1 = 1 V (b) V1 = 3 V

Consider an NMOS, as shown in Fig. 2, VDD = 3 V, Vtno = 0.6 V, μnCoxW/L = 40 μA/V2, γn = 0.5 V1/2 , ϕf = 0.3 V, and λn = 0.015 1/V. The initial value of V2 is 0 V, i.e., V2(t = 0) = 0 V. Find V2(t >> 0) in the following cases under DCSS condition: (a) V1 = 1 V (b) V1 = 3 V

Image text
Consider an NMOS, as shown in Fig. 2, VDD = 3 V, Vtno = 0.6 V, μnCoxW/L = 40 μA/V2, γn = 0.5 V1/2 , ϕf = 0.3 V, and λn = 0.015 1/V. The initial value of V2 is 0 V, i.e., V2(t = 0) = 0 V. Find V2(t >> 0) in the following cases under DCSS condition: (a) V1 = 1 V (b) V1 = 3 V

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

The technological parameters are μnCox = 4μpCox = 40 μA/V2, ∣γ∣ = 0.5 V1/2, 2ϕf = 0.5 V, λ = 0.02 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V. Considering the CMOS inverter shown in the figure below, (W/L)n = 1/4, (W/L)p = 1, and VDD = 3.3 V. Find (1) expression of Δt = t2−t1, using the integral method, (2) if C = 40 fF, the value of Δt = t2−t1, using the average current method, and (3) based on the result obtained in (2), determine the duration of T and the switching power dissipated in the inverter.

The technological parameters are μnCox = 4μpCox = 40 μA/V2, ∣γ∣ = 0.5 V1/2, 2ϕf = 0.5 V, λ = 0.02 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V. Considering the CMOS inverter shown in the figure below, (W/L)n = 1/4, (W/L)p = 1, and VDD = 3.3 V. Find (1) expression of Δt = t2−t1, using the integral method, (2) if C = 40 fF, the value of Δt = t2−t1, using the average current method, and (3) based on the result obtained in (2), determine the duration of T and the switching power dissipated in the inverter.
Solution
1 0

The introduction to basic logic-circuit concepts that apply to MOSFET circuits is the most popular technology for implementation of digital systems. The two families of MOS logic circuits introduce are NMOS and CMOS (a) Given a NMOS inverter with a current source pull-up using the following specification data: μnCox = 50 μA/V2, μpCox = 25 μA/V2 VTn = −VTp = 1 V, VDD = 5 V, Ln = Lp = 1.5 μm λn = λp = 0.1 V−1 Find the width of the device so its saturation current is 200 μA when VB = 3 V. (5 marks) ii. Calculate the required width of the n-channel device so VOUT is 0.05 V when VIN is 5 V. (5 marks) (b) Consider a simple NMOS inverter with a resistor pull-up as shown in Figure 5 using the following specification data. i. Determine the value of pull-up resistor, R for the inverter. (4 marks) ii. Find the required value for fabrication width and length, (W/L). ( 6 marks) μnCox = 100 μA/V2, VTn = −VTp = 1 V V1 = 5 V, VDD = 5 V, VO = 50 mV, rDS = 50 ohm
Solution
0 0

Consider a PMOS, as shown in Fig. 1,VDD = 3 V, μpCoxW/L = 20 μA/V2, γp = -0.5 V1/2, ϕf = 0.3 V, λp = -0.01 1/V and Vtpo = -0.8 V. The Circuit is in DCSS. Find the threshold voltage Vtp of the PMOS and the current Ip in this case.
Solution
0 0