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A set of I-V characteristics for an nMOS transistor at room temperature is shown for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find : (a) the threshold voltage VT0 and, (b) velocity saturation vsat. Some of the parameters are given as: W = 0.6 um, EcL = 0.4 V, lambda = 0.05, tox = 16 A, |2phiF| = 1.1 V.

A set of I-V characteristics for an nMOS transistor at room temperature is shown for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find : (a) the threshold voltage VT0 and, (b) velocity saturation vsat. Some of the parameters are given as: W = 0.6 um, EcL = 0.4 V, lambda = 0.05, tox = 16 A, |2phiF| = 1.1 V.

A set of I-V characteristics for an nMOS transistor at room temperature is shown for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find : (a) the threshold voltage VT0 and, (b) velocity saturation vsat. Some of the parameters are given as: W = 0.6 um, EcL = 0.4 V, lambda = 0.05, tox = 16 A, |2phiF| = 1.1 V.

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A set of I-V characteristics for an nMOS transistor at room temperature is shown for different biasing conditions. Figure P3.7 shows the measurement setup. Using the data, find : (a) the threshold voltage VT0 and, (b) velocity saturation vsat. Some of the parameters are given as: W = 0.6 um, EcL = 0.4 V, lambda = 0.05, tox = 16 A, |2phiF| = 1.1 V.

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