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A set of I-V characteristics for an nMOS transistor at room temperature is shown in the table below for different biasing conditions. The figure shows the measurement setup. Using die table and the below parameters: W/L = 2 tox = 18 A |2phiF|= 1.1 V a) Calculate the threshold voltage (VT0) b) Electron mobility (un) c) Body effect coefficient gamma (y).

A set of I-V characteristics for an nMOS transistor at room temperature is shown in the table below for different biasing conditions. The figure shows the measurement setup. Using die table and the below parameters: W/L = 2 tox = 18 A |2phiF|= 1.1 V a) Calculate the threshold voltage (VT0) b) Electron mobility (un) c) Body effect coefficient gamma (y).

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A set of I-V characteristics for an nMOS transistor at room temperature is shown in the table below for different biasing conditions. The figure shows the measurement setup. Using die table and the below parameters: W/L = 2 tox = 18 A |2phiF|= 1.1 V a) Calculate the threshold voltage (VT0) b) Electron mobility (un) c) Body effect coefficient gamma (y).

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