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A silicon-based MOSFET has a square gate 0.53 μm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.22 μm thick and has a dielectric constant of 4.5. (a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 2.9 V ? (a) Number Units (b) Number Units

A silicon-based MOSFET has a square gate 0.53 μm on edge. The insulating silicon oxide layer that separates the gate from the p-type substrate is 0.22 μm thick and has a dielectric constant of 4.5. (a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 2.9 V ? (a) Number Units (b) Number Units

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A silicon-based MOSFET has a square gate 0.53 μ m on edge. The insulating silicon oxide layer that separates the gate from the p -type substrate is 0.22 μ m thick and has a dielectric constant of 4.5. (a) What is the equivalent gate-substrate capacitance (treating the gate as one plate and the substrate as the other plate)? (b) Approximately how many elementary charges e appear in the gate when there is a gate-source potential difference of 2.9 V ? (a) Number Units ◻ (b) Number Units

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