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a. The low noise margin (NML) is less than the high noise margin (NMH) b. When vI = VDD/2, the p-channel MOSFET is biased in triode. c. The n-channel MOSFET is biased in saturation when vI = VIL. d. The electron and hole mobilities are assumed to be equal. Answer: a Answer: b Answer: c Answer: d

a. The low noise margin (NML) is less than the high noise margin (NMH) b. When vI = VDD/2, the p-channel MOSFET is biased in triode. c. The n-channel MOSFET is biased in saturation when vI = VIL. d. The electron and hole mobilities are assumed to be equal. Answer: a Answer: b Answer: c Answer: d

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a. The low noise margin ( N M L ) is less than the high noise margin ( N M H ) b. When v I = V D D / 2 , the p-channel MOSFET is biased in triode. c. The n -channel MOSFET is biased in saturation when v I = V I L . d. The electron and hole mobilities are assumed to be equal. Answer: a Answer: b Answer: c Answer: d

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