(a) The MOS capacitor in Fig. 4.1 has VTN = 1 V and VG = 2 V. To what region of operation does this bias condition correspond? (b) Repeat for VG = -2 V. (c) Repeat for VG = 0.5 V. Figure 4.1 MOS capacitor structure on p-type silicon.
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(a) The MOS capacitor in Fig. 4.1 has VTN = 1 V and VG = 2 V. To what region of operation does this bias condition correspond? (b) Repeat for VG = -2 V. (c) Repeat for VG = 0.5 V. Figure 4.1 MOS capacitor structure on p-type silicon.
![Consider the circuit shown below with a Si n−MOSFET. Given: VDD = 7 V, VG = 2 V and RL = 1.1 KΩ. Consider the MOSFET is operating in the linear region under this biasing condition. If the voltage drop across the drain and source terminals, VDS = 0.4 V and the threshold voltage, VT = 0.5 V. Calculate - (a) The drain current (IDS) and the power dissipated in the MOSFET. (b) 'ON resistance' of the MOSFET. (c) 'Conduction parameter (Kn)' of the MOSFET. (d) Capacitance of the gate oxide (Cox) [in F/cm2]. (e) Thickness of the gate oxide layer (tox) and the transconductance (gm) of the MOSFET. (f) Calculate the sheet electron concentration (ns) in the channel at the source end. Given: Channel length, L = 0.8 μm, Gate Width, W = 20 μm, electron mobility in the channel, μn = 800 cm2/Vs, and dielectric constant of the oxide layer is 3.9.](https://www.doubtrix.com/uploads/editor/2821050692MgjcqPguJp.png)
