A TTL inverter prototype is shown in Figure 8 with the following values: VCC = 3.5 V, RB = 6kΩ, and RC = 3kΩ Figure 8. (a) When V1 = 0.15 V, Q2 is off and Q1 is in saturation with VBEsat = 0.75 V and VCEsat = 0.05 V. Calculate the available currents and the power dissipated in the circuit. (b) When vi = Vcc, Q1 is at reversed active mode with βR = 0.25 and Q2 is in saturation mode with VBEsat = 0.75 V and VCEsat = 0.15 V. Calculate all the available currents and the total power of dissipation.
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A TTL inverter prototype is shown in Figure 8 with the following values: VCC = 3.5 V, RB = 6kΩ, and RC = 3kΩ Figure 8. (a) When V1 = 0.15 V, Q2 is off and Q1 is in saturation with VBEsat = 0.75 V and VCEsat = 0.05 V. Calculate the available currents and the power dissipated in the circuit. (b) When vi = Vcc, Q1 is at reversed active mode with βR = 0.25 and Q2 is in saturation mode with VBEsat = 0.75 V and VCEsat = 0.15 V. Calculate all the available currents and the total power of dissipation.
![Consider the following amplifier circuit. Both MOSFET’s have the following specifications: (W/L) = (6µm/0.18µm), processing parameters kp = µpCox = 70µA/V2 , kn = µnCox = 270µA/V2 , |Vt| = 0.45 V, V Ω A = 12.5 V/µm = VA, and Q1 is biased so that Vov = 200mV, gate of Q2 is at DC voltage VG = 0.96 V and VDD = 1.8 V. a. What is the configuration of amplifier, i.e. CE or CB or CD or CS or CG or CC or CD or CS with active load or CG with active load or CE with active load or CB with active load or CD with active load or CC with active load or CE using 0.18µm technology? Or none of the above the correct answer is b. Find the small-signal output resistance Rout and input resistance Rin looking into gate Q1 c. Calculate small-signal voltage gain of the amplifier Av = [vo/vi ] d. What is the voltage swing at the output, i.e. vomax and vomin ? e. Calculate the power consumed by the amplifier.](https://www.doubtrix.com/uploads/editor/9038008426JohCcjsvNB.jpg)