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(a) When operating in saturation region, a NMOS has ID-VGS relationship as shown below: a) Write the NMOS current equation (ignoring channel length modulation effect) based on parameters kn’, (W/L), gate-source voltage VGS and threshold voltage VTN which represents the current characteristics shown above: iD = b) Value of threshold voltage VTN = V c) Value of kn' parameter if (W/L) = 5. μA/V2 d) Drain current iD at point C (VGS = 2. 5V). mA

(a) When operating in saturation region, a NMOS has ID-VGS relationship as shown below: a) Write the NMOS current equation (ignoring channel length modulation effect) based on parameters kn’, (W/L), gate-source voltage VGS and threshold voltage VTN which represents the current characteristics shown above: iD = b) Value of threshold voltage VTN = V c) Value of kn' parameter if (W/L) = 5. μA/V2 d) Drain current iD at point C (VGS = 2. 5V). mA

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(a) When operating in saturation region, a NMOS has ID-VGS relationship as shown below: a) Write the NMOS current equation (ignoring channel length modulation effect) based on parameters kn’, (W/L), gate-source voltage VGS and threshold voltage VTN which represents the current characteristics shown above: iD = b) Value of threshold voltage VTN = V c) Value of kn' parameter if (W/L) = 5. μA/V2 d) Drain current iD at point C (VGS = 2. 5V). mA

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