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(a) When the transistor is biased with VG = 2.8 V, VD = 5 V, Vs = 1 V, and VB = 0 V, the drain current is ID = 0.24 mA. Determine W/L. (b) Calculate ID for VG = 5 V, VD = 4 V, VS = 2 V, and VB = 0 V. (c) If un = 500 cm2/Vs and Cg = CoxWL = 1.0 x 10-15 F, find W and L. An enhancement-type nMOS transistor has the following parameters: VT0 = 0.8V y = 0.2 V1/2 lambda = 0.05 V-1 |2phif| = 0.58 V k

(a) When the transistor is biased with VG = 2.8 V, VD = 5 V, Vs = 1 V, and VB = 0 V, the drain current is ID = 0.24 mA. Determine W/L. (b) Calculate ID for VG = 5 V, VD = 4 V, VS = 2 V, and VB = 0 V. (c) If un = 500 cm2/Vs and Cg = CoxWL = 1.0 x 10-15 F, find W and L. An enhancement-type nMOS transistor has the following parameters: VT0 = 0.8V y = 0.2 V1/2 lambda = 0.05 V-1 |2phif| = 0.58 V k

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(a) When the transistor is biased with VG = 2.8 V, VD = 5 V, Vs = 1 V, and VB = 0 V, the drain current is ID = 0.24 mA. Determine W/L. (b) Calculate ID for VG = 5 V, VD = 4 V, VS = 2 V, and VB = 0 V. (c) If un = 500 cm2/Vs and Cg = CoxWL = 1.0 x 10-15 F, find W and L. An enhancement-type nMOS transistor has the following parameters: VT0 = 0.8V y = 0.2 V1/2 lambda = 0.05 V-1 |2phif| = 0.58 V k

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