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Again consider the circuit shown in Figure 10.37 (a). Let V+ = 5 V and R1 = 35 kΩ. Let VEB1(on) = 0.6 V. Neglect dc base currents. The baseemitter area of Q2 is twice that of Q1. The Early voltages are VAN = 120 V and VAP = 80 V. Determine the small-signal voltage gain for (a) RL = ∞ and (b) RL = 250 kΩ. (a) Fiqure 10.37 (a) Simple BJT amplifier

Again consider the circuit shown in Figure 10.37 (a). Let V+ = 5 V and R1 = 35 kΩ. Let VEB1(on) = 0.6 V. Neglect dc base currents. The baseemitter area of Q2 is twice that of Q1. The Early voltages are VAN = 120 V and VAP = 80 V. Determine the small-signal voltage gain for (a) RL = ∞ and (b) RL = 250 kΩ. (a) Fiqure 10.37 (a) Simple BJT amplifier

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Again consider the circuit shown in Figure 10.37 (a). Let V + = 5 V and R 1 = 35 k Ω . Let V E B 1 ( o n ) = 0.6 V . Neglect dc base currents. The baseemitter area of Q 2 is twice that of Q 1 . The Early voltages are V A N = 120 V and V A P = 80 V . Determine the small-signal voltage gain for (a) R L = ∞ and (b) R L = 250 k Ω . (a) Fiqure 10.37 (a) Simple BJT amplifier

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For the circuit shown in Figure 4.1, the transistor parameters are VT N = 0.6 V, kn’ = 80 μA/V2, and λ = 0.015 V-1. Let VDD = 5 V. (a) Design the transistor width-to-length ratio W/L and the resistance RD such that IDQ = 0.5 mA, VGSQ = 1.2 V, and VDSQ = 3 V. (b) Determine gm and ro. (c) Determine the small-signal voltage gain Av = vo/vi.

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