An enhancement-type nMOS transistor has the following parameters: a) Determine the size of the transistor (W/L) if the transistor is biased with VG=5 V, VD=4 V, Vs =0.5 V, VB=0 V, and the drain current is lD=150uA b) If VG=5V, VD=4V, Vs=1 V, and VB=0 V, find the value of drain current (lD). c) Determine the value of W and L, if un = 650 cm2/V.s and Cg = Cox.W.L = 10
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![For the circuit shown in Figure 1, NMOS device M1 has the following properties: kn’(W/L) = 180 μA/V2, VT0 = 2 V, λ = 0.02 V-1, γ = 0.4 V1/2, 2ϕF = 0.7 V, and ID = 10 mA. Note that capacitor Cbig is a DC blocking cap, i.e., Cbig is an open at DC and a short at all other frequencies. Figure 1. Circuit for Problem 1. a) Determine the numerical value of bias voltage Vbias which is needed to achieve a drain current of ID = 10 mA. b) Draw the small-signal equivalent circuit. c) Analyze the small-signal circuit to find Rin, Rout, and Av = Vout/Vin. Find the analytic expression for each quantity first, before determining the numerical answers. d) Recall that gmb/gm = χ. Determine the numerical value of χ for this problem. [Note that this part has nothing to do with parts (b) and (c).] e) What is the threshold voltage of device M1? [Note that this part has nothing to do with parts (b) and (c).] Show your work, list all numerical values in proper engineering notation format with appropriate units and with at least two decimal places of precision.](https://www.doubtrix.com/js/ckeditor/filemanager/connectors/php/editor/1701531864-Rjgbdog0ehds.png)
