An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxi

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An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness of tox = 12 nm = 120 Å on a p-type silicon substrate doped at Na = 1016 cm3. Determine the capacitance Cox, CFB′, Cmin′, and C′ (inv) at (a) f = 1 Hz and (b) f = 1 MHz. (c) Determine VFB and VT. (d) Sketch C′/Cox versus VG for parts (a) and (b).

An ideal MOS capacitor with an n+ polysilicon gate has a silicon dioxide thickness of tox = 12 nm = 120 Å on a p-type silicon substrate doped at Na = 1016 cm3. Determine the capacitance Cox, CFB′, Cmin′, and C′ (inv) at (a) f = 1 Hz and (b) f = 1 MHz. (c) Determine VFB and VT. (d) Sketch C′/Cox versus VG for parts (a) and (b).

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An ideal MOS capacitor with an

n^{+}

polysilicon gate has a silicon dioxide thickness of

t_{o x} = 12 n m = 120 Å

on a p-type silicon substrate doped at

N_{a} = 10^{16} {c m}^{3}

. Determine the capacitance

C_{o x}, C_{F B}^{'}, C_{min}^{'}

, and

C^{'}

(inv) at (a)

f = 1 H z

and (b)

f = 1 M H z

. (c) Determine

V_{F B}

and

V_{T}

. (d) Sketch

C^{'} / C_{o x}

versus

V_{G}

for parts (a) and (b).

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