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An Mosfet has L = 0.4 μm, tox = 8 nm, W = 4 μm, μn = 450 cm2 /Vsec, VT = 0.7 V. Calculate (i) The values of Vgs and VDS min to operate the Mosfet in saturation with a drain current 100 μA. (ii) Find the values of Vgs required to operate a device as 1000 Ω resistor for very small VDS.

An Mosfet has L = 0.4 μm, tox = 8 nm, W = 4 μm, μn = 450 cm2 /Vsec, VT = 0.7 V. Calculate (i) The values of Vgs and VDS min to operate the Mosfet in saturation with a drain current 100 μA. (ii) Find the values of Vgs required to operate a device as 1000 Ω resistor for very small VDS.

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An Mosfet has L = 0.4 μ m , t o x = 8 n m , W = 4 μ m , μ n = 450 c m 2 / V s e c , V T = 0.7 V . Calculate (i) The values of V g s and V D S min to operate the Mosfet in saturation with a drain current 100 μ A . (ii) Find the values of V g s required to operate a device as 1000 Ω resistor for very small V D S . [CO1-An]

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