An n-channel enhancement-mode MOSFET has the following parameters: conductance parameter, Kn = 3 mA/V2 and threshold voltage, VT = 1.5 V. The MOSEET is operating with VGS = 2 V. a) Determine the value of VDS (sat) b) If the MOSFET is operated in the saturation region with VDS = 14 V, determine the value of the drain current, ID c) If the MOSFET is operated in the saturation region with VDS = 14 V, determine the value of the transconductance in saturation d) If the MOSFET is operated in the nonsaturation region with VDS = 0.6 V, determine the value of the drain current, ID. e) If the MOSFET is operated in the nonsaturation region with VDS = 0.6 V, determine the value of transconductance in nonsaturation
![Q.2(a) An NMOS transistor, operating in the linear region with VDS = 50 mV, is found to conduct 25 μA for VGS = 1 V and 50 μA for VGS = 1.5 V. What is the apparent value of threshold voltage VT? If kn′ = 50 μA/V2, what is the device W/L ratio? What current would you expect to flow with VOS = 2 V and VDS = 0.1 V ? If the device is operated at VGS = 2 V, at what value of VDS will the drain end of the MOSFET channel just reach pinch-off? [4][CO1] (b) Design a CMOS inverter with switching threshold voltage of 2/3VDD. What is the resulting ratio of WP/WN ? (Assume LP = LN, μN = 2.5μP, |VTP| = VTN = 0.2VDD, [4][CO2]](https://www.doubtrix.com/uploads/editor/0592017159IpshciERik.png)
