An n-channel MOSFET has the following parameters: L = 1 um, Cox = 6.9*10^-8 F/cm^2 , VT = 0.5 V and un = 680 cm^2V^-1s^-1 . Design the channel width such that the saturation current is 4 mA for VG = VD = 1.5 V. Use long channel theory with a bulk-charge factor of 1.4 and VA = 10 V.
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Work With Experts to Reach at Correct Answers![The following single stage differential amplifier circuit is designed for a 0.18 μm CMOS technology. Given: VDD = |VSS| = 1.5 V, |VTH| = 0.5 V, L = 0.36 μm (for all transistors), μCox = 4μCox = 400 μA/V2, and λ = 0.2 a) For a bias current of Ibias = 200 μA and over drive voltage |Vov| = 0.2 V for all transistors, determine the W/L ratios for M1, M2, M3, and M4. (10 points) b) Determine the small signal differential gain vdo/vid for this design. (10 points) Useful formulae: for n-channel MOSFET iDS = K[(vGS − VTH)vDS − 12 vDS2] triode region K = K′(WL) = μCox(WL) iDS = 12 K(vGS − VTH)2(1 + λvDS) saturation region where VA = 1 λ, and VA = VA′L, ro = 1 λID Vow = VGS − VTH overdrive voltage](https://www.doubtrix.com/uploads/editor/9810917332GadsOPFElN.png)
![For an ideal n-channel MOSFET, the drain current equation (ID) is given as below. ID = WμnCox 2L[2(VGS − VT)VDS − VDS2] (0 ≤ VDS ≤ VDS(sat)) (a) Derive the saturation drain voltage (VDS(sat)) as a function of (VGS − VT). (b) Derive the saturation drain current (ID(sat)) as a function of (VGS − VT). (c) For very small VDS, describe how to experimentally determine both parameters, i. e. , (i) electron mobility (μn) and (ii) threshold voltage (VT). (d) Derive the transconductance (gm) at the saturation point as a function of VDS. (e) Assume that this n-channel MOSFET has the following parameters: channel length (L) = 1.25×10−4 cm, electron mobility (μn) = 650 cm2 /V−s, gate oxide (SiO2) capacitance (Cox) = 6.9×10−8 F/cm2, and threshold voltage (VT) = 0.65 V. Determine the channel width (W) such that ID (sat) is 4×10−3 A when VGS = 5 V.](https://www.doubtrix.com/uploads/editor/7329276601GxBbwPuntf.png)
