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An n-channel MOSFET has the following parameters: μn = 400 cm2 /V−s tox = 500Å L = 2 μm W = 20 μm VT = +0.75 V Assume the transistor is biased in the saturation region at VGS = 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 μm. If a load resistance of RL = 10 kΩ is connected to the output, calculate the cutoff frequency.

An n-channel MOSFET has the following parameters: μn = 400 cm2 /V−s tox = 500Å L = 2 μm W = 20 μm VT = +0.75 V Assume the transistor is biased in the saturation region at VGS = 4 V. (a) Calculate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 μm. If a load resistance of RL = 10 kΩ is connected to the output, calculate the cutoff frequency.

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An n-channel MOSFET has the following parameters:
μ n = 400 c m 2 / V − s t o x = 500 Å L = 2 μ m W = 20 μ m V T = + 0.75 V
Assume the transistor is biased in the saturation region at V G S = 4 V . (a) Calulate the ideal cutoff frequency. (b) Assume that the gate oxide overlaps both the source and drain contacts by 0.75 μ m . If a load resistance of R L = 10 k Ω is connected to the output, calculate the cutoff frequency.

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