An N-MOSFET is fabricated using a 0.18 μm technology (minimum channel

Question

Notify Me Bookmark

An N-MOSFET is fabricated using a 0.18 μm technology (minimum channel length Lmin = 0.18 μm.) It's kn′ = 387 μA/V2 and VA′ = 5 V/μm. For the basic amplifier cell that is biased by a current source, as shown in the following circuit, it's required to obtain an intrinsic gain ( vd/vi in the circuit) of 25 V/V and a gm of 1 mA/V. Assuming the overdrive voltage in the system is VoV = 0.2 V, find the required values of L, W/L, and the bias current I of the cell. (Note: the Early voltage VA can be given in the format of VA′ - Early voltage per unit channel length. Therefore, VA = VA′⋅L.)

Image text

An N-MOSFET is fabricated using a $0.18 μ m$ technology (minimum channel length $L_{min} = 0.18 μ m$ .) It's $k_{n}^{'} = 387 μ A / V^{2}$ and $V_{A}^{'} = 5 V / μ m$ . For the basic amplifier cell that is biased by a current source, as shown in the following circuit, it's required to obtain an intrinsic gain ( $v_{d} / v_{i}$ in the circuit) of 25 $V / V$ and a $g_{m}$ of $1 m A / V$ . Assuming the overdrive voltage in the system is $V_{o V} = 0.2 V$ , find the required values of $L, W / L$ , and the bias current $I$ of the cell. (Note: the Early voltage $V_{A}$ can be given in the format of $V_{A}^{'}$ - Early voltage per unit channel length. Therefore, $V_{A} = V_{A}^{'} \cdot L$ .)