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An NMOS transistor biased in the saturation region displays a drain current of 200 uA at a VGS of 1.5 V, and a drain current of 20 uA at a VGS of 0.8 V. Determine the threshold voltage and unCox(W/L) of the device, assuming lambda = 0. (b) Calculate the small signal parameters (gm and ro) of the device mentioned in part (a), assuming the device is biased at (ID, VDS) = (100 uA, 1 V) and lambda = 0.2. Neglect the body effect.

An NMOS transistor biased in the saturation region displays a drain current of 200 uA at a VGS of 1.5 V, and a drain current of 20 uA at a VGS of 0.8 V. Determine the threshold voltage and unCox(W/L) of the device, assuming lambda = 0. (b) Calculate the small signal parameters (gm and ro) of the device mentioned in part (a), assuming the device is biased at (ID, VDS) = (100 uA, 1 V) and lambda = 0.2. Neglect the body effect.

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An NMOS transistor biased in the saturation region displays a drain current of 200 uA at a VGS of 1.5 V, and a drain current of 20 uA at a VGS of 0.8 V. Determine the threshold voltage and unCox(W/L) of the device, assuming lambda = 0. (b) Calculate the small signal parameters (gm and ro) of the device mentioned in part (a), assuming the device is biased at (ID, VDS) = (100 uA, 1 V) and lambda = 0.2. Neglect the body effect.

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