An nMOS transistor is fabricated with the following physical parameters: ND = 10^20 cm-3 NA(substrate) = 10^16 cm-3 N+ A(chan. stop) = 10^19 cm-3 W = 10 µm Y= 5 m L = 1.5 µm LD = 0.25 µm Xj = 0.4 µm (a) Determine the drain diffusion capacitance for VDB = 5 V and 2.5 V. (b) Calculate the overlap capacitance between gate and drain for an oxide thickness of tox = 200 A°.
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An nMOS transistor is fabricated with the following physical parameters: ND = 10^20 cm-3 NA(substrate) = 10^16 cm-3 N+ A(chan. stop) = 10^19 cm-3 W = 10 µm Y= 5 m L = 1.5 µm LD = 0.25 µm Xj = 0.4 µm (a) Determine the drain diffusion capacitance for VDB = 5 V and 2.5 V. (b) Calculate the overlap capacitance between gate and drain for an oxide thickness of tox = 200 A°.
