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An RF amplifier is designed by a MOSFET at 2.4 GHz for Wi-Fi applications. The S-parameters of the transistor are shown below. (a) Based on z-parameters, determine the new [S] matrix with a 0.5 nH inductor Ls connected to the source terminal as the inductive source degeneration for improved matching. ( 10 /100) (b) With LS connected, another inductor LD connected to the drain is used for inductive peaking, often used to increase the high-frequency gain. Based on ABCD parameters, determine the overall [S] matrix of the amplifier if LD is 1.5 nH. (10/100) (a) (b) S11 = 0.7∠−45∘S12 = 0.12∠45∘S21 = 5.8∠120∘S22 = 0.5∠−30∘

An RF amplifier is designed by a MOSFET at 2.4 GHz for Wi-Fi applications. The S-parameters of the transistor are shown below. (a) Based on z-parameters, determine the new [S] matrix with a 0.5 nH inductor Ls connected to the source terminal as the inductive source degeneration for improved matching. ( 10 /100) (b) With LS connected, another inductor LD connected to the drain is used for inductive peaking, often used to increase the high-frequency gain. Based on ABCD parameters, determine the overall [S] matrix of the amplifier if LD is 1.5 nH. (10/100) (a) (b) S11 = 0.7∠−45∘S12 = 0.12∠45∘S21 = 5.8∠120∘S22 = 0.5∠−30∘

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  1. An RF amplifier is designed by a MOSFET at 2.4 G H z for Wi-Fi applications. The S-parameters of the transistor are shown below. (a) Based on z-parameters, determine the new [S] matrix with a 0.5 n H inductor L s connected to the source terminal as the inductive source degeneration for improved matching. ( 10 / 100 ) (b) With L S connected, another inductor L D connected to the drain is used for inductive peaking, often used to increase the high-frequency gain. Based on ABCD parameters, determine the overall [S] matrix of the amplifier if L D is 1.5 nH. ( 10 / 100 ) (a) (b)
S 11 = 0.7 ∠ − 45 ∘ S 12 = 0.12 ∠ 45 ∘ S 21 = 5.8 ∠ 120 ∘ S 22 = 0.5 ∠ − 30 ∘

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