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Analyse the performances of the BJT and the MOSFET in the circuit of Figure 4 by determining a value for RE to set ID to 4 mA IDSS = 18 mA, VP = −3 V, VDD = 25 V, VEE = −12 V, RG = 330 kΩ, RD = 2.2 kΩ. Figure 4: MOSFET and BJT circuit

Analyse the performances of the BJT and the MOSFET in the circuit of Figure 4 by determining a value for RE to set ID to 4 mA IDSS = 18 mA, VP = −3 V, VDD = 25 V, VEE = −12 V, RG = 330 kΩ, RD = 2.2 kΩ. Figure 4: MOSFET and BJT circuit

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Analyse the performances of the BJT and the MOSFET in the circuit of Figure 4 by determining a value for R E to set I D to 4 m f
I D S S = 18 m A , V P = − 3 V , V D D = 25 V , V E E = − 12 V , R G = 330 k Ω , R D = 2.2 k Ω .
Figure 4: MOSFET and BJT circuit

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