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Another MOSFET Q2 is added to the circuit of question one as shown below. Both Q1 and Q2 are identical with Vth = 0.5 V, unCox = 0.4 mA/V^2, and W / L = 4. Find the value of R2 that results in Q2 to operate at the edge of the saturation region.

Another MOSFET Q2 is added to the circuit of question one as shown below. Both Q1 and Q2 are identical with Vth = 0.5 V, unCox = 0.4 mA/V^2, and W / L = 4. Find the value of R2 that results in Q2 to operate at the edge of the saturation region.

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Another MOSFET Q2 is added to the circuit of question one as shown below. Both Q1 and Q2 are identical with Vth = 0.5 V, unCox = 0.4 mA/V^2, and W / L = 4. Find the value of R2 that results in Q2 to operate at the edge of the saturation region.

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Consider that transistors Q1 and Q2 are identical in Fig. 12. Those MOSFETs have Vtn = 0.5V and kn = 1.6 mA/V^2. Design the circuit given below such a way so that the value of R2 should make Q2 to operate at the edge of the saturation region.
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For the circuit in Fig. E5.10, assume that Q1 and Q2 are matched except for having different widths, W1 and W2. Let Vt = 0.5 V, k’n = 0.4 mA/V2, L1 = L2 = 0.36 μm, W1 = 1.44 μm, and λ = 0. (a) Find the value of R required to establish a current of 50 μA in Q1. (b) Find W2 andR2 so thatQ2 operates at the edge of saturation with a current of 0.5 mA Figure E5.10

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D5.10 Figure E5.10, shows a circuit obtained by augmenting the circuit of Fig. E5.9 considered in Exercise 5.9 with a transistor Q2 identical to Q1 and a resistance R2. Find the value of R2 that results in Q2 operating at the edge of the saturation region. Use your solution to Exercise 5.9.
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