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Assume that in a certain process technology, the mobility of holes in relation to the mobility of electrons, is given by μn = 5 2 μp, then the current capacity of its pMOS transistors is 4 times as the current capacity in its nMOS transistors of the same width/length. the same as the current capacity in its nMOS transistors of the same width/length. 0.4 of the current capacity in its nMOS transistors of the same width/length. 0.8 of the current capacity in its nMOS transistors of the same width/length. twice as the current capacity in its nMOS transistors of the same width/length. 4 times as the current capacity in its nMOS transistors of the same width/length.

Assume that in a certain process technology, the mobility of holes in relation to the mobility of electrons, is given by μn = 5 2 μp, then the current capacity of its pMOS transistors is 4 times as the current capacity in its nMOS transistors of the same width/length. the same as the current capacity in its nMOS transistors of the same width/length. 0.4 of the current capacity in its nMOS transistors of the same width/length. 0.8 of the current capacity in its nMOS transistors of the same width/length. twice as the current capacity in its nMOS transistors of the same width/length. 4 times as the current capacity in its nMOS transistors of the same width/length.

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Assume that in a certain process technology, the mobility of holes in relation to the mobility of electrons, is given by μ n = 5 2 μ p , then the current capacity of its pMOS transistors is 4 times as the current capacity in its nMOS transistors of the same width/length. the same as the current capacity in its nMOS transistors of the same width/length. 0.4 of the current capacity in its nMOS transistors of the same width/length. 0.8 of the current capacity in its nMOS transistors of the same width/length. twice as the current capacity in its nMOS transistors of the same width/length. 4 times as the current capacity in its nMOS transistors of the same width/length.

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