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Assume that MOSFET in the common-source amplifier shown below is properly DC bias to operate in saturation region and that it has the following properties: Vt = 0.5 V, kn= 1 mA/V2, VA = 300 V. (a) (40%) Perform DC analysis to find ID and Vov. (b) (10%) Calculate the small-signal parameters and ro. (c) (10%) Draw the small-signal equivalent circuit of the amplifier. (d) (20%) Find the amplifier voltage gain Av = vo/vi (e) (10%) Find the overall voltage gain Gv = vo/vsig. (f) (10%) Find input (Rin ) and output (Rout) resistances.

Assume that MOSFET in the common-source amplifier shown below is properly DC bias to operate in saturation region and that it has the following properties: Vt = 0.5 V, kn= 1 mA/V2, VA = 300 V. (a) (40%) Perform DC analysis to find ID and Vov. (b) (10%) Calculate the small-signal parameters and ro. (c) (10%) Draw the small-signal equivalent circuit of the amplifier. (d) (20%) Find the amplifier voltage gain Av = vo/vi (e) (10%) Find the overall voltage gain Gv = vo/vsig. (f) (10%) Find input (Rin ) and output (Rout) resistances.

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Assume that MOSFET in the common-source amplifier shown below is properly DC bias to operate in saturation region and that it has the following properties: Vt = 0.5 V, kn= 1 mA/V2, VA = 300 V. (a) (40%) Perform DC analysis to find ID and Vov. (b) (10%) Calculate the small-signal parameters and ro. (c) (10%) Draw the small-signal equivalent circuit of the amplifier. (d) (20%) Find the amplifier voltage gain Av = vo/vi (e) (10%) Find the overall voltage gain Gv = vo/vsig. (f) (10%) Find input (Rin ) and output (Rout) resistances.

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Q6. An amplifier circuit using an n-MOSFET is shown in Fig. Q6. The n-MOSFET has the following parameters: Kn = 1 mA/V2 and λ = 0.02 V−1. vin is a small signal AC voltage source. Fig. Q6 (a) Calculate the DC gate voltage, VG. (b) Assuming that the n-MOSFET is operating in the saturation region and neglecting channel length modulation, calculate the threshold voltage, VTHN, given that the voltage drop across the dc current source, IBUS, has been designed to be approximately 0 V. Verify that the n-MOSFET is operating in the saturation region. (c) Find the values of small signal parameters gm and ro of the n-MOSFET. (d) What is the configuration of the amplifier circuit? (e) Draw the small signal ac equivalent circuit of Fig. Q6. You may assume that in the small signal ac equivalent circuit, all the coupling capacitors behave like short circuits. (f) Calculate the input resistance, Rin, and output resistance, Rout . (g) Calculate the voltage gain, vout/vin.

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In the circuit shown in Fig. 2 below, Rth = 1 kΩ, RL = 20 kΩ, VDD = VSS = 2 V and IS = 1 mA. The n-channel MOS transistor has VTN = 0.5 V, Kn = 500 μV/A2 and λ → 0. (a) Identify this circuit as a common-source, common-drain, or common-gate amplifier. (b) Draw a DC equivalent circuit of the amplifier. (c) Calculate the gm of the transistor. (d) Draw an AC equivalent of the circuit. Replace the transistor with its small-signal equivalent. (e) Find the overall small-signal voltage gain (vo/vi) of the amplifier. (f) Will the gain (vo/vi) of this amplifier be affected by Rth of the signal source? Why? (g) Find the output resistance of the amplifier seen from RL.
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In the circuit shown in Fig. 2 below, Rth = 1 kΩ, RL = 20 kΩ, VDD = VSS = 2 V and IS = 1 mA. The n-channel MOS transistor has VTN = 0.5 V, Kn = 500 μV/A2 and λ → 0. (a) Identify this circuit as a common-source, common-drain, or common-gate amplifier. (b) Draw a DC equivalent circuit of the amplifier. (c) Calculate the gm of the transistor. (d) Draw an AC equivalent of the circuit. Replace the transistor with its small-signal equivalent. (e) Find the overall small-signal voltage gain (vo/vi) of the amplifier. (f) Will the gain (vo/vi) of this amplifier be affected by Rth of the signal source? Why? (g) Find the output resistance of the amplifier seen from RL.

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