Assume the following unless stated otherwise for a 0.18 μm CMOS proces

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Assume the following unless stated otherwise for a 0.18 μm CMOS process: VDD = 3.3 V, Lmin = 0.18 μm Vtn = 0.5 V or −1 V (choose accordingly), Vtp = −0.5 V μnCox = 390 μA/V2, μpCox = 90 μA/V2 Consider a CMOS inverter with a load of Ctot = 250 fF. a) Calculate all five voltages of the voltage transfer characteristic for kn = kp. b) Find the noise margins and the area of the inverter. c) Make a qualitative evaluation of the inverter regarding its static performance. d) Calculate the rise time τr using the RC method

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Assume the following unless stated otherwise for a

0.18 μ m

CMOS process:

V_{D D} = 3.3 V, L_{min} = 0.18 μ m

V_{t n} = 0.5 V

- 1 V

(choose accordingly),

V_{t p} = - 0.5 V

μ_{n} C_{o x} = 390 μ A / V^{2}, μ_{p} C_{o x} = 90 μ A / V^{2}

Consider a CMOS inverter with a load of

C_{t o t} = 250 f F

a) Calculate all five voltages of the voltage transfer characteristic for $k_{n} = k_{p}$ .
b) Find the noise margins and the area of the inverter.
c) Make a qualitative evaluation of the inverter regarding its static performance.
d) Calculate the rise time $τ_{r}$ using the $R C$ method