Assume the following unless stated otherwise for a 0.25 μm CMOS proces

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Assume the following unless stated otherwise for a 0.25 μm CMOS process: VDD = 5 V, Lmin = 0.25 μm Vtn = 0.5 V or −1 V (choose accordingly), Vtp = −0.5 V μnCox = 265 μA/V2, μpCox = 90 μA/V2 Consider a resistively loaded inverter with a load of Ctot = 300 fF. a) Design the inverter (specify W, L values for the transistor, and RL) so that VOL = 0.025 V. b) Calculate all the other voltages of the voltage transfer characteristic. c) Find the noise margins and the area of the inverter.

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Assume the following unless stated otherwise for a

0.25 μ m

CMOS process:

\begin{matrix} V_{D D} = 5 V, L_{min} = 0.25 μ m \\ V_{t n} = 0.5 V or - 1 V (choose accordingly), V_{t p} = - 0.5 V \\ μ_{n} C_{o x} = 265 μ A / V^{2}, μ_{p} C_{o x} = 90 μ A / V^{2} \end{matrix}

Consider a resistively loaded inverter with a load of $C_{l v} = 300 f F$ .
a) Design the inverter (specify $W$ , $L$ values for the transistor, and $R_{L}$ ) so that $V_{O L} = 0.025 V$ .
b) Calculate all the other voltages of the voltage transfer characteristic.
c) Find the noise margins and the area of the inverter.