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Assume we have a CMOS inverter with a voltage transfer curve given below. VDD = 1.5 V, Vtn = 0.2 V, Vtp = −0.2 V Which one is the valid ratio of βp/βn for this inverter? a) 5 b) 1 c) 0.2 At point Q, what are the most possible operating regions for nmos and pmos of this inverter? (Cut off Linear Saturation) nmos = pmos = Compute the noise margins NML and NMH. NML = v NMH = v

Assume we have a CMOS inverter with a voltage transfer curve given below. VDD = 1.5 V, Vtn = 0.2 V, Vtp = −0.2 V Which one is the valid ratio of βp/βn for this inverter? a) 5 b) 1 c) 0.2 At point Q, what are the most possible operating regions for nmos and pmos of this inverter? (Cut off Linear Saturation) nmos = pmos = Compute the noise margins NML and NMH. NML = v NMH = v

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Assume we have a CMOS inverter with a voltage transfer curve given below. V D D = 1.5 V , V t n = 0.2 V , V t p = − 0.2 V
  1. Which one is the valid ratio of β p / β n for this inverter? a) 5 b) 1 c) 0.2
  2. At point Q , what are the most possible operating regions for nmos and pmos of this inverter? (Cut off Linear Saturation) nmos = pmos =
  3. Compute the noise margins N M L and N M H .
N M L = ◻ v N M H =⟶
v v

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Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5upCox = 115 uA/V2. In addition, QN and QP have L = 0.25 ?m, and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD / 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL, VIH, VIL, NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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In the following CMOS inverter logic gate, assume the transistor size of (W/L)n = 0.8 μm/0.20 μm and (W/L)p = 1.6 μm/0.20 μm and VDD = 3.0 V. (a). Determine the operation modes (e. g. cut-off, linear or saturation) of the NMOS and PMOS transistors respectively at Vin = 0.2 V, 0.9 V, 1.5 V, 2.1 V, and 2.8 V. Using a table to list the operation modes is recommended. (Note: You may need to do multiple calculations for the data point Vin = 1.5 V with Vin = 1.4 V or 1.6 V). (b). Using the tabulated results in (a) or otherwise, determine the current flowing through both the NMOS and PMOS transistors at the different input voltage Vin in (a). (c). Using Matlab or Excel, plot a graph of the current against the input voltage Vin. (d). Using the above results in (a) and (b) or otherwise, determine the output voltage Vout at the different input voltage Vin in (a). (e). Using Matlab or Excel, plot a graph of the voltage transfer characteristics (VTC) (i. e. output voltage Vout versus input voltage Vin ) of the CMOS inverter with the five sets of data points obtained. It is given that the threshold voltage VTon = 0.50 V and μnCox = 430 μA/V2 for the NMOS transistor while VTop = −0.50 V and μpCox = 210 μA/V2 for the PMOS transistor. Assume the long-channel approximation of the MOSFET and there is no body effect (i. e. the body terminal of the MOSFETs are properly connected respectively to ground and VDD).
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Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5 upCox = 115 uA/V2 . In addition, QN and QP have L = 0.25 um and (W/L)n = 1.5. Investigate the variation of VM with the ratio Wp/Wn. Specifically, calculate VM for (a) Wp = 3.5Wn (the matched case), (b) Wp = Wn (the minimum-size case); and (c) Wp = 2Wn (a compromise case). For cases (b) and (c), estimate the approximate reduction in NML and silicon area relative to the matched case (a).Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5 upCox = 115 uA/V2 . In addition, QN and QP have L = 0.25 um and (W/L)n = 1.5. Investigate the variation of VM with the ratio Wp/Wn. Specifically, calculate VM for (a) Wp = 3.5Wn (the matched case), (b) Wp = Wn (the minimum-size case); and (c) Wp = 2Wn (a compromise case). For cases (b) and (c), estimate the approximate reduction in NML and silicon area relative to the matched case (a).
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