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Assuming that transistors M1 is properly biased ( Vin has a proper DC component and a small-signal component) and M1 and M2 are operating in the saturation region, and capacitor C is large enough such that at the frequency of the input small signal it can be considered as a short circuit, find Find RL such that the magnitude of the small-signal gain of the circuit, namely, ∣Vout/Vin ∣ is 5 V/V. In the following circuit we have: VDD = 3 V (W/L)3 = (W/L)5 = (W/L)6 = 10 (W/L)4 = 40 (W/L)2 = 100 (W/L)1 = 25 R = 1 kΩ The technology parameters are: λ(NMOS) = λ(PMOS) = 0 V−1, γ = 0, VTH(NMOS) = ∣VTH(PMOS)∣ = 0.5 V, μnCox = 0.5 mA/V2, μpCox = 0.25 mA/V2.

Assuming that transistors M1 is properly biased ( Vin has a proper DC component and a small-signal component) and M1 and M2 are operating in the saturation region, and capacitor C is large enough such that at the frequency of the input small signal it can be considered as a short circuit, find Find RL such that the magnitude of the small-signal gain of the circuit, namely, ∣Vout/Vin ∣ is 5 V/V. In the following circuit we have: VDD = 3 V (W/L)3 = (W/L)5 = (W/L)6 = 10 (W/L)4 = 40 (W/L)2 = 100 (W/L)1 = 25 R = 1 kΩ The technology parameters are: λ(NMOS) = λ(PMOS) = 0 V−1, γ = 0, VTH(NMOS) = ∣VTH(PMOS)∣ = 0.5 V, μnCox = 0.5 mA/V2, μpCox = 0.25 mA/V2.

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Assuming that transistors M1 is properly biased ( Vin has a proper DC component and a small-signal component) and M1 and M2 are operating in the saturation region, and capacitor C is large enough such that at the frequency of the input small signal it can be considered as a short circuit, find Find RL such that the magnitude of the small-signal gain of the circuit, namely, ∣Vout/Vin ∣ is 5 V/V. In the following circuit we have: VDD = 3 V (W/L)3 = (W/L)5 = (W/L)6 = 10 (W/L)4 = 40 (W/L)2 = 100 (W/L)1 = 25 R = 1 kΩ The technology parameters are: λ(NMOS) = λ(PMOS) = 0 V−1, γ = 0, VTH(NMOS) = ∣VTH(PMOS)∣ = 0.5 V, μnCox = 0.5 mA/V2, μpCox = 0.25 mA/V2.

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Further, assume that the DC current of M1 and M2 is 1 mA each and that of M3 and M4 is 0.5 mA each. Assume all transistors are in operating in saturation region and the aspect ratio of transistors is as follows: (W/L)1 = 125, (W/L)2 = 250, (W/L)3 = 40, and (W/L)4 = 80. a) Find transconductance (gm) of all the transistors and the drain-source resistance (ro) of the PMOS transistors, that is, ro2 and ro4. [10 marks] b) Find the voltage gains Vout1/Vin and Vout /Vin. . In the following circuit assume: λ(NMOS) = 0 V−1, λ(PMOS) = 0.05 V−1, VDD = 3.0 V, VTH(NMOS) = ∣VTH(PMOS)∣ = 0.5 V, μnCox = 0.1 mA/V2, μpCox = 0.05 mA/V2, and γ(NMOS) = γ(NMOS) = 0.

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