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Assuming the PMOS is biased in the Saturation Region, and given that: Vtp = -1 V, kp' = 75 uA/V2, L = 0.2 um, W = 2 um, and lambda = 0 Part a) Calculate the value of I2 Provide an explanation of your answer here: Part b) Calculate the value of VG I2 Provide an explanation of your answer here: Part c) Assuming that VSG =3 V, then calculate the value of VS Provide an explanation of your answer here: Part d) Assuming that VSG =3 V, then calculate the value of ID Provide an explanation of your answer here: Part e). Assuming that VSG = 3 V,IS = 1.5 mA, and the transistor is operating at the edge of saturation, then calculate the value of RD.

Assuming the PMOS is biased in the Saturation Region, and given that: Vtp = -1 V, kp' = 75 uA/V2, L = 0.2 um, W = 2 um, and lambda = 0 Part a) Calculate the value of I2 Provide an explanation of your answer here: Part b) Calculate the value of VG I2 Provide an explanation of your answer here: Part c) Assuming that VSG =3 V, then calculate the value of VS Provide an explanation of your answer here: Part d) Assuming that VSG =3 V, then calculate the value of ID Provide an explanation of your answer here: Part e). Assuming that VSG = 3 V,IS = 1.5 mA, and the transistor is operating at the edge of saturation, then calculate the value of RD.

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Assuming the PMOS is biased in the Saturation Region, and given that: Vtp = -1 V, kp' = 75 uA/V2, L = 0.2 um, W = 2 um, and lambda = 0 Part a) Calculate the value of I2 Provide an explanation of your answer here: Part b) Calculate the value of VG I2 Provide an explanation of your answer here: Part c) Assuming that VSG =3 V, then calculate the value of VS Provide an explanation of your answer here: Part d) Assuming that VSG =3 V, then calculate the value of ID Provide an explanation of your answer here: Part e). Assuming that VSG = 3 V,IS = 1.5 mA, and the transistor is operating at the edge of saturation, then calculate the value of RD.

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