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Assuming (W/L)1 = 2 μm/0.18 μm and (W/L)1 = 5 μm/0.18 μm, find the voltage transfer characteristic of the inverter in Fig. 1. Compute the voltage expressions for every operating region of the transistors and find the drain currents of M1 and M2 for Vin = VDD/2. Comment on possible improvements to reduce this current. Figure 1 For the transistors in this question, assume VDD = 1.8 V, μnCox = 100 μAV−1, μpCox = 50 μAV−1, Vthn = 0.4 V, Vthp = −0.5 V, λn = λp = 0.

Assuming (W/L)1 = 2 μm/0.18 μm and (W/L)1 = 5 μm/0.18 μm, find the voltage transfer characteristic of the inverter in Fig. 1. Compute the voltage expressions for every operating region of the transistors and find the drain currents of M1 and M2 for Vin = VDD/2. Comment on possible improvements to reduce this current. Figure 1 For the transistors in this question, assume VDD = 1.8 V, μnCox = 100 μAV−1, μpCox = 50 μAV−1, Vthn = 0.4 V, Vthp = −0.5 V, λn = λp = 0.

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For the transistors in this question, assume V D D = 1.8 V , μ n C o x = 100 μ A V − 1 , μ p C o x = 50 μ A V − 1 , V thn = 0.4 V , V thp = − 0.5 V , λ n = λ p = 0 .
  1. Assuming ( W / L ) 1 = 2 μ m / 0.18 μ m and ( W / L ) 1 = 5 μ m / 0.18 μ m , find the voltage transfer characteristic of the inverter in Fig. 1. Compute the voltage expressions for every operating region of the transistors and find the drain currents of M1 and M2 for V in = V D D / 2 . Comment on possible improvements to reduce this current. Figure 1

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For the transistors in the homework, assume VDD = 1.8 V, μnCox = 100 μAV−1, μpCox = 50 μAV−1, Vthn = 0.4 V, Vthp = −0.5 V, λn = λp = 0.05 V−1 In the inverter of Fig. 1, the output low level must remain below 150 mV. If (W/L)2 = 3 μm/0.18 μm, determine the minimum required width of M1 in case L1 = 180 nm. Find the static power consumption of the inverter in case where VOL = 150 mV.

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Design Parameter VDD = 1.8 V, μnCox = 100 uA/V2, μpCox = 50 uA/V2, λn = 0.1 V−1, λp = 0.2 V−1, VTH, N = 0.4 V, VTH, P = −0.5 V Length = 0.35 um, ID1, 3 = 100 uA, IDREFn 1, 3 = 30 uA, DC voltage of Vin = 1.2 V. Design 1) Design common source amplifier and biasing circuits in the circuit (a) (Determine W/L of transistors and RREF1 and derive the gain) (15 pt) 2) Design common source amplifier and cascode biasing circuits in the circuit (b) (Determine W/L of transistors and RREF2 and derive the gain) (15 pt)
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22. In Fig. 6, VDD = 3 V, VB = 3 V, (W/L)1 = (W/L)3 = (10μm/0.1μm), (W/L)2 = (20μm/0.1μm). (a) For Vin = 1.8V, calculate Vout and ID2. (10) (b) Calculate the small-signal gain of this amplifier @Vin =1.8V. Figure 6 μnCox = 100 μA/V2, μpCox = 40 μA/V2, Vthn = |Vthp| = 0.5 V, λn = λp = 0
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