b. Design the NMOS saturated inverter shown in Figure 3 for VDD = 3.3 V and P = 0.1 mW with Vo = 0.2 V and IDD = 33 μA. Assume Kn′ = 25 μA/V2 and VTN = 1 V. Explain the functionality of the inverter. [5 marks] ii. Design the inverter with the data given above. Ignore the body effect [10 marks] Figure 3