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(b) For a MOSFET current source shown in Figure 3, the bias voltages are V+ = 1.5 V and V− = −1.5 V. Transistors are available with the parameters: kn' = 200 μA/V2, VTN = 0.5 V, and λ = 0. Figure 3 (i) Design the circuit such that IREF = 100 μA, IO = 250 μA, and VDS2(sat) = 1 V. [10 Marks] (ii) Calculate the change in output current, dIo and hence the output current Io when VDS2 = 3 V. Let λ = 0.01 V−1.

(b) For a MOSFET current source shown in Figure 3, the bias voltages are V+ = 1.5 V and V− = −1.5 V. Transistors are available with the parameters: kn' = 200 μA/V2, VTN = 0.5 V, and λ = 0. Figure 3 (i) Design the circuit such that IREF = 100 μA, IO = 250 μA, and VDS2(sat) = 1 V. [10 Marks] (ii) Calculate the change in output current, dIo and hence the output current Io when VDS2 = 3 V. Let λ = 0.01 V−1.

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(b) For a MOSFET current source shown in Figure 3, the bias voltages are V + = 1 . 5 V and V − = − 1 . 5 V . Transistors are available with the parameters: k n = 2 0 0 μ A / V 2 , V T N = 0.5 V , and λ = 0 . Figure 3 (i) Design the circuit such that I R E F = 1 0 0 μ A , I O = 2 5 0 μ A , and V D S 2 ( s a t ) = 1 V . [10 Marks] (ii) Calculate the change in output current, d I o and hence the output current I o when V D S 2 = 3 V . Let λ = 0 . 0 1 V − 1 .

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*D10.45 The MOSFET current-source circuit in Figure P10.44 is biased at V+ = 2.0 V. The transistor parameters are VTN = 0.5 V, kn′ = 80 μA/V2, and λ = 0.015 V −1. (a) Design the circuit such that IREF = 50 μA and the nominal bias current is IO = 100 μA. (b) Find the output resistance Ro. (c) Determine the percentage change in IO for a change in drain-to-source voltage of ΔVDS2 = 1 V. Figure P10.44

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a) Refer to the multi-transistor MOSFET current source in Figure 3 below. It is given that V+ = 5V, V− = 0. For the transistors: kn′ = 40 uA/V2, VTN = 1V, and λ = 0. Design the current source such that IREF = 0.25mA, Io1 = 0.10mA, Io2 = 0.5mA and VDS2 (sat) = 0.85 V. Calculate all VGS voltages of the transistors. Figure 3 b) If λ = 0.02V-1, calculate IO2 when VDS2 = 3 V. Use relevant values obtained for Figure 3 in part (a).

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For a MOSFET current source circuit in Figure 1 the transistor parameters are VTN = 0.5 V, λ = 0, and k’n = 80 µA/V2 . Design the circuit such that VDS2(sat) = 0.3 V, IREF = 50 µA, and the load current is IO = 100 µA. Show clearly all calculations as marks are given according to this.

For a MOSFET current source circuit in Figure 1 the transistor parameters are VTN = 0.5 V, λ = 0, and k’n = 80 µA/V2 . Design the circuit such that VDS2(sat) = 0.3 V, IREF = 50 µA, and the load current is IO = 100 µA. Show clearly all calculations as marks are given according to this.
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