(b) For a MOSFET current source shown in Figure 5 the circuit parameters are: V+ = 3 V and V − = −3 V. Transistor parameters for NMOS are: VTN = 0.7 V, kn′ = 200 μA/V2 and λn = 0.01 V−1; and the transistor parameters for PMOS are: VTP = −0.6 V, kp′ = 80 μA/V2 and λp = 0.03 V−1. The transistor aspect ratios are: (W/L)1 = 10, (W/L)2 = 35, (W/L)3 = 5 and (W/L)4 = 15. Find IO, IREF and the VGS voltages for all transistors if the minimum voltage at the drain of transistor M2, i.e. VD2 is −2.3 V. [12 Marks] Figure 5
![(b) For a MOSFET current source shown in Figure 5 the circuit parameters are: V+ = 3 V and V − = −3 V. Transistor parameters for NMOS are: VTN = 0.7 V, kn′ = 200 μA/V2 and λn = 0.01 V−1; and the transistor parameters for PMOS are: VTP = −0.6 V, kp′ = 80 μA/V2 and λp = 0.03 V−1. The transistor aspect ratios are: (W/L)1 = 10, (W/L)2 = 35, (W/L)3 = 5 and (W/L)4 = 15. Find IO, IREF and the VGS voltages for all transistors if the minimum voltage at the drain of transistor M2, i.e. VD2 is −2.3 V. [12 Marks] Figure 5](https://www.doubtrix.com/uploads/editor/2283158972ZKWioHWPli.jpg)
![(b) For a MOSFET current source shown in Figure 3, the bias voltages are V+ = 1.5 V and V− = −1.5 V. Transistors are available with the parameters: kn' = 200 μA/V2, VTN = 0.5 V, and λ = 0. Figure 3 (i) Design the circuit such that IREF = 100 μA, IO = 250 μA, and VDS2(sat) = 1 V. [10 Marks] (ii) Calculate the change in output current, dIo and hence the output current Io when VDS2 = 3 V. Let λ = 0.01 V−1.](https://www.doubtrix.com/uploads/editor/2253037833BFDIismlOd.jpg)
