Question

Notify Me Bookmark

Calculate the small-signal y-parameter of an n-channel MOSFET what has a threshold voltage of -0.5V, Kn = 0.5 uA/V 2 and a channel length parameter of 0.01 V^-1 . The MOSFET is biased at VGS = 2 V and VDS = 4 V.

Calculate the small-signal y-parameter of an n-channel MOSFET what has a threshold voltage of -0.5V, Kn = 0.5 uA/V 2 and a channel length parameter of 0.01 V^-1 . The MOSFET is biased at VGS = 2 V and VDS = 4 V.

Image text
Calculate the small-signal y-parameter of an n-channel MOSFET what has a threshold voltage of -0.5V, Kn = 0.5 uA/V 2 and a channel length parameter of 0.01 V^-1 . The MOSFET is biased at VGS = 2 V and VDS = 4 V.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

(a) An ideal n-channel MOSFET has parameters tax = 18 nm = 180Å, μn = 450 cm2 /V−s, and VT = 0.4 V. The measured current in the saturation region is ID( sat ) = 0.8 mA when biased at VGS = 2.0 V. Determine the (i) process conduction parameter and (ii) width-to-length ratio. (b) An ideal p-channel MOSFET has the same oxide thickness as given in part (a), a mobility of μp = 210 cm2 /V-s, and a threshold voltage of VT = −0.4 V. The measured current in the saturation region is also ID( sat ) = 0.8 mA when biased at VSG = 2.0 V. Determine the (i) process conduction parameter and (ii) width-to-length ratio.
Solution
0 0

A MOS capacitor has an n+ polysilicon gate with EF = EC+0.15 eV in the polysilicon, a 50 nm thick SiO2 gate dielectric with Qss = 0, and a p-type silicon substrate with Na = x.5×1016 /cm3, where x is the last digit of your student number. For silicon at room temperature ni = 1010 /cm3, Nv = 1.8×1019 /cm3, Nc = 3.2×1019 /cm3, and ϵSi = 11.7ϵ0. For SiO2 ϵSiO2 = 3.9ϵ0. a. Find the threshold voltage for this MOS capacitor. b. If the capacitor is made into a MOSFET with L = 2 μm, W = 200 μm, and a channel field effect mobility of 450 cm2/V⋅s, find ID for VGS − VT = 2 V and VDS = 1 V. c. Suppose it is desired to have a depletion mode MOSFET and that any gate oxide thickness is possible, but no other parameters can be changed. What is the most negative threshold voltage that is possible for the MOS capacitor with your substrate doping? d. Suppose it is desired to have a MOSFET with a threshold voltage of +0.5 V and again any gate oxide thickness is possible, but no other parameters can be changed. What oxide thickness will give VT = 0.5 V ? e. Suppose the source, drain, and body of the MOSFET are all grounded and the capacitance-voltage characteristics are measured. Sketch the high and low frequency capacitance-voltage characteristics and label significant features.
Solution
0 0

An n-channel enhancement-mode MOSFET has the following parameters: conductance parameter, Kn = 3 mA/V2 and threshold voltage, VT = 1.5 V. The MOSEET is operating with VGS = 2 V. a) Determine the value of VDS (sat) b) If the MOSFET is operated in the saturation region with VDS = 14 V, determine the value of the drain current, ID c) If the MOSFET is operated in the saturation region with VDS = 14 V, determine the value of the transconductance in saturation d) If the MOSFET is operated in the nonsaturation region with VDS = 0.6 V, determine the value of the drain current, ID. e) If the MOSFET is operated in the nonsaturation region with VDS = 0.6 V, determine the value of transconductance in nonsaturation
Solution
0 0