Question

Notify Me Bookmark

Compute VT of an NMOS from I-V plot in Figure 1. displayed below. Compute channel length modulation factor (λ) from the I-V plot in Figure 2.

Compute VT of an NMOS from I-V plot in Figure 1. displayed below. Compute channel length modulation factor (λ) from the I-V plot in Figure 2.

Image text
Compute VT of an NMOS from I-V plot in Figure 1. displayed below. Compute channel length modulation factor (λ) from the I-V plot in Figure 2.

Detailed Answer

1 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up
  • Student Reviews:
  • (1)

Similar/Related Questions

The circuit in Figure 1 is an NMOS switch circuit. Assume VDD = 5 V, γ = 0.4 V1/2, 2∣φf∣ = 0.6 V, VTO = 1 V, kn′ = 100 μA/V2, (W/L) = 10, and λ = 0.1 V−1. The channel length modulation is applicable only in the saturation region. a. Determine the charging current to CL right after the rising edge of the input. Assume that the capacitor is completely discharge at the beginning of the transition. Make sure that you include all applicable device parameters in your calculations. b. Determine the charging current to CL when the output voltage is at 50% of VDD. Again, make sure that you include all applicable device parameters in your calculation. c. Use the results from parts a and b to estimate the low-to-high propagation delay (tpLH) of the NMOS switch in Figure 1. d. Use PSPICE and measure the tpLH of the circuit in Figure 1 and compare your results with part c. (Hint: the .model for this device is shown below of this page)
Solution
1 0

In this question, we will study the source follower cascaded by a CS stage. Neglect body effect and channel length modulation. (a) First we carry out a dc analysis on the CS stage. In the CS stage circuit shown in Figure 1, assume μnCox(W/L)1 = μpCox(W/L)2 = 1mA/V2, VTN = 0.7V, VTP = −1V, VDD = 2.5V. Calculate I1 and VOUT such that M1 operates in saturation with VGS1 = 0.8 V. What is VIN if M1 is at the edge of saturation? (b) Then we do small signal analysis on the CS stage. In the circuit shown in Figure 1, derive the small signal voltage gain Av = vout/vin. What is the maximum dc level of Vin for which M1 remains saturated? Express VIN by VDD, gate-source voltages and threshold voltages of M1 and M2. (c) To accommodate an input de level close to VDD, we further cascade it with a source follower as shown in Figure 2. Derive the small signal gain vout/vin. If VIN = VDD, what relationship between the gate-source voltages of M2 and M3 guarantees that M1 is saturated?
Solution
1 0

The diagram below shows the structure of an inverter circuit built using an NMOS transistor of size 3/2, and a pull up resistor RD = 1kohm. Assuming zero body-bias, find the region of operation of the transistor and iD for a. vI = VDD/2 (2 points ) b. vI = VDD/3 (2 points) Repeat the above question with RD = 100kohm. ( 3 points) Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

The diagram below shows the structure of an inverter circuit built using an NMOS transistor of size 3/2, and a pull up resistor RD = 1kohm. Assuming zero body-bias, find the region of operation of the transistor and iD for a. vI = VDD/2 (2 points ) b. vI = VDD/3 (2 points) Repeat the above question with RD = 100kohm. ( 3 points) Note: 2lambda = 0.18 um is a convention used to represent transistor dimensions in terms of the technology length lambda. This is different from channel length modulation parameter. Sizing is shown in the form of W/L and as a factor of transistor feature size i.e. 2lambda. Assume long-channel device.

Solution
1 0