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Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5upCox = 115 uA/V2. In addition, QN and QP have L = 0.25 ?m, and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD / 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL, VIH, VIL, NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5upCox = 115 uA/V2. In addition, QN and QP have L = 0.25 ?m, and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD / 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL, VIH, VIL, NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5upCox = 115 uA/V2. In addition, QN and QP have L = 0.25 ?m, and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD / 2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL, VIH, VIL, NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 2.5upCox = 470 uA/V2 . In addition, QN and QP have L = 65 nm and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH , VOL, VIH , VIL, NML, and NMH . (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 5.4upCox = 540 uA/V2. In addition, QN and QP have L = 65nm and (W/L)n = 1.5. (a) Find Wp that results in VM=VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL,VIH,VIL,NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

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Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5 upCox = 115 uA/V2 . In addition, QN and QP have L = 0.25 um and (W/L)n = 1.5. Investigate the variation of VM with the ratio Wp/Wn. Specifically, calculate VM for (a) Wp = 3.5Wn (the matched case), (b) Wp = Wn (the minimum-size case); and (c) Wp = 2Wn (a compromise case). For cases (b) and (c), estimate the approximate reduction in NML and silicon area relative to the matched case (a).Consider a CMOS inverter fabricated in a 0.25-um CMOS process for which VDD = 2.5 V, Vtn = -Vtp = 0.5 V, and unCox = 3.5 upCox = 115 uA/V2 . In addition, QN and QP have L = 0.25 um and (W/L)n = 1.5. Investigate the variation of VM with the ratio Wp/Wn. Specifically, calculate VM for (a) Wp = 3.5Wn (the matched case), (b) Wp = Wn (the minimum-size case); and (c) Wp = 2Wn (a compromise case). For cases (b) and (c), estimate the approximate reduction in NML and silicon area relative to the matched case (a).
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