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Consider a CMOS inverter fabricated in a 65 nm process that has the following characteristics: VDD = 2.5V VTn = -VTp = 0.5 V unCOX = 3.5upCOX = 115 uA/V2 QN & QP -> L = 250 nm & (W/L)N = 1.5 (a) For when WP = 3.5WN (matched case), calculate VM, NML, NMH, and the silicon area used. (b) For when WP = WN, calculate VM, NML, NMH, and the silicon area used.

Consider a CMOS inverter fabricated in a 65 nm process that has the following characteristics: VDD = 2.5V VTn = -VTp = 0.5 V unCOX = 3.5upCOX = 115 uA/V2 QN & QP -> L = 250 nm & (W/L)N = 1.5 (a) For when WP = 3.5WN (matched case), calculate VM, NML, NMH, and the silicon area used. (b) For when WP = WN, calculate VM, NML, NMH, and the silicon area used.

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Consider a CMOS inverter fabricated in a 65 nm process that has the following characteristics: VDD = 2.5V VTn = -VTp = 0.5 V unCOX = 3.5upCOX = 115 uA/V2 QN & QP -> L = 250 nm & (W/L)N = 1.5 (a) For when WP = 3.5WN (matched case), calculate VM, NML, NMH, and the silicon area used. (b) For when WP = WN, calculate VM, NML, NMH, and the silicon area used.

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