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Consider a CMOS process for which Lmin = 0.18 μm, tox = 4 nm, μn = 450 cm2 /V•s, and Vt = 0.5 V. (a) Find Cox and kn’. (b) For an NMOS transistor with W/L = 2.4 μm/0.18 μm, calculate the values of VOV , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 500-Ω resistor for very small vDS.

Consider a CMOS process for which Lmin = 0.18 μm, tox = 4 nm, μn = 450 cm2 /V•s, and Vt = 0.5 V. (a) Find Cox and kn’. (b) For an NMOS transistor with W/L = 2.4 μm/0.18 μm, calculate the values of VOV , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 500-Ω resistor for very small vDS.

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Consider a CMOS process for which Lmin = 0.18 μm, tox = 4 nm, μn = 450 cm2 /V•s, and Vt = 0.5 V. (a) Find Cox and kn’. (b) For an NMOS transistor with W/L = 2.4 μm/0.18 μm, calculate the values of VOV , VGS , and VDSmin needed to operate the transistor in the saturation region with a dc current ID = 0.5 mA. (c) For the device in (b), find the values of VOV and VGS required to cause the device to operate as a 500-Ω resistor for very small vDS.

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