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Consider a contact between a metal and an p-type Silicon with Na = 1.3×1016 cm−3 at T = 300 K. Calculate the built-in potential barrier in the metal-semiconductor diode for a -3 V applied bias. Given: metal work function 5.38 eV, electron affinity for Silicon 4.01 eV, and ni = 1.5×1010 cm−3. Answer: The correct answer is: 2.53

Consider a contact between a metal and an p-type Silicon with Na = 1.3×1016 cm−3 at T = 300 K. Calculate the built-in potential barrier in the metal-semiconductor diode for a -3 V applied bias. Given: metal work function 5.38 eV, electron affinity for Silicon 4.01 eV, and ni = 1.5×1010 cm−3. Answer: The correct answer is: 2.53

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Consider a contact between a metal and an p-type Silicon with Na = 1.3 × 10 16 cm − 3 at T = 300 K . Calculate the built-in potential barrier in the metal-semiconductor diode for a -3V applied bias. Given: metal work function 5.38 eV , electron affinity for Silicon 4.01 eV , and n i = 1.5 × 10 10 cm − 3 .
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The correct answer is: 2.53

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