Consider a MOS capacitor with p+ polysilicon gate and p-type silicon s

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Consider a MOS capacitor with p+ polysilicon gate and p-type silicon substrate with NA = 1016 cm−3, EF = EV in the polysilicon gate. Assume the following parameters: tox = 200 o, QSS′ = 0, ni = 1.5×1010 cm−2, εo = 3.9×8.854×10−14 F/cmεs = 11.7×εo, εox = 3.9×εo a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in μm ) at the threshold inversion. d) ( 5 points) Calculate the flat band voltage. e) (5 points) Determine the threshold voltage.

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Consider a MOS capacitor with

p^{+}

polysilicon gate and

p

-type silicon substrate with

N_{A} = 10^{16} {c m}^{- 3} \cdot E_{F} = E_{V}

in the polysilicon gate. Assume the following parameters:

◻

\begin{array}{l} t_{o x} = 200 o, Q_{S S}^{'} = 0, n_{i} = 1.5 \times 10^{10} {c m}^{- 2}, ε_{o} = 3.9 \times 8.854 \times 10^{- 14} F / c m \\ ε_{s} = 11.7 \times ε_{o}, ε_{o x} = 3.9 \times ε_{o} \end{array}

a) (5 points) Calculate the metal-semiconductor work function difference. b) (5 points) Calculate the surface potential at the threshold inversion. c) (5 points) Calculate the depletion width (in