Question

Notify Me Bookmark

Consider a pseudo-NMOS gate shown in the figure, VDD = 3.3 V and all the transistors are sized 1/1. Find (1) the logic function implemented, (2) VOH and VOL, and (3) tpHL and tpLH if the capacitance at the output note is 50 fF. tpHL is the time required for Vo to change from VOH to 0.5 VDD and the tpLH is the time required for VO to change from VOL to 0.5 VDD The technological parameters are μnCox = 4 μpCox = 160 μA/V2, |γ| = 0.5 V1 /2, 2ϕf = 0.5 V, λ = 0.001 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V.

Consider a pseudo-NMOS gate shown in the figure, VDD = 3.3 V and all the transistors are sized 1/1. Find (1) the logic function implemented, (2) VOH and VOL, and (3) tpHL and tpLH if the capacitance at the output note is 50 fF. tpHL is the time required for Vo to change from VOH to 0.5 VDD and the tpLH is the time required for VO to change from VOL to 0.5 VDD The technological parameters are μnCox = 4 μpCox = 160 μA/V2, |γ| = 0.5 V1 /2, 2ϕf = 0.5 V, λ = 0.001 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V.

Image text
The technological parameters are μ n C o x = 4 μ p C o x = 160 μ A / V 2 , | γ | = 0.5 V 1 / 2 , 2 ϕ f = 0.5 V , λ = 0.001 V − 1 , V tno = 0.6 V , and V tpo = − 0.8 V .
Consider a pseudo-NMOS gate shown in the figure, V D D = 3.3 V and all the transistors are sized 1 / 1 . Find (1) the logic function implemented, (2) V O H and V O L , and (3) t p H L and t p L H if the capacitance at the output note is 50 f F . t p H L is the time required for V o to change from V O H to 0.5 V D D and the t p L H is the time required for V O to change from V O L to 0.5 V D D

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Doubtrix Logo

Problem is not yet solved!

Click on Notify me to get email when question is answered.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Notify me Login Sign Up

Similar/Related Questions

Q3. Consider the pseudo-NMOS inverter of which the transistors have the following parameters:μnCox = 4μpCox = 160 μA/V2, ∣γ| = 0.5 V1/2, 2Φf = 0.5 V, λ = 0.001 V−1, Vtno = 0.6 V, Vtpo = −0.8 V, and (W/L)p = 1. The supply voltage VDD = 3.3 V. The capacitive load at the output node is 20 pF. The input voltage Vin is expected to be a perfect periodic square wave with full swing (low level : 0 V, high level: VDD). (a) Determine (W/L)n so that the low voltage level of the output signal Vo will not higher than 0.4 V. (b) Based on the result of (a), calculate the static current of the circuit when Vi = VDD. (c) Based on the result of (a), estimate the time required for Vo to change from 0.8 VDD to 0.2VDD.
Solution
0 0

Q1. Consider the CMOS inverter of which the transistors have the following parameters: μnCox = 4μpCox = 160 μA/V2, ∣γ| = 0.5 V1/2, 2Φf = 0.5 V, λ = 0.001 V−1, Vtno = 0.6 V, Vtpo = −0.8 V, (W/L)n = 1 and (W/L)p = 4. The supply voltage VDD = 3.3 V. The capacitive load at the output node is 20 pF. The input voltage Vin is expected to be a perfect periodic square wave with full swing (low level : 0 V, high level: VDD). (a) Calculate tl, the time required for the output voltage Vout to change from 0 V to the threshold voltage of the inverter, using the average-current method. (b) Write the expression of calculation of t2, the time required for the output voltage Vout to change from 2.9 V to the 0.4 V, using the analytical method (integral). Then calculate t2 using the average-current method. (c) Determine the maximum frequency of the periodic square wave input so that the output signal will have a full swing in each cycle. (d) Calculate the peak value of in, the NMOS transistor current, during the transition, and its average value over a clock cycle T. (The average value here is not the same as the average-current in the "average-current method" for delay estimation) (e) If the capacitive load is now changed to be 250 pF, what can be done to make tl and t2 unchanged?
Solution
0 0

The technological parameters are μnCox = 4μpCox = 40 μA/V2, ∣γ∣ = 0.5 V1/2, 2ϕf = 0.5 V, λ = 0.02 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V. Considering the CMOS inverter shown in the figure below, (W/L)n = 1/4, (W/L)p = 1, and VDD = 3.3 V. Find (1) expression of Δt = t2−t1, using the integral method, (2) if C = 40 fF, the value of Δt = t2−t1, using the average current method, and (3) based on the result obtained in (2), determine the duration of T and the switching power dissipated in the inverter.

The technological parameters are μnCox = 4μpCox = 40 μA/V2, ∣γ∣ = 0.5 V1/2, 2ϕf = 0.5 V, λ = 0.02 V−1, Vtno = 0.6 V, and Vtpo = −0.8 V. Considering the CMOS inverter shown in the figure below, (W/L)n = 1/4, (W/L)p = 1, and VDD = 3.3 V. Find (1) expression of Δt = t2−t1, using the integral method, (2) if C = 40 fF, the value of Δt = t2−t1, using the average current method, and (3) based on the result obtained in (2), determine the duration of T and the switching power dissipated in the inverter.
Solution
1 0