Question

Notify Me Bookmark

Consider a pseudo-NMOS inverter as shown in Fig. 16.21 and fabricated in a 65-nm CMOS technology for which VDD = 1.0 V, IVt| = 0.35 V, kn/kp = 5.4, and kn = 540 uA/V2. (a) Find VOH. (b) Derive an equation for VOL that is a function of VDD, Vt, and kn/kp. (c) Evaluate the equation using the process parameters in the problem statement.

Consider a pseudo-NMOS inverter as shown in Fig. 16.21 and fabricated in a 65-nm CMOS technology for which VDD = 1.0 V, IVt| = 0.35 V, kn/kp = 5.4, and kn = 540 uA/V2. (a) Find VOH. (b) Derive an equation for VOL that is a function of VDD, Vt, and kn/kp. (c) Evaluate the equation using the process parameters in the problem statement.

Consider a pseudo-NMOS inverter as shown in Fig. 16.21 and fabricated in a 65-nm CMOS technology for which VDD = 1.0 V, IVt| = 0.35 V, kn/kp = 5.4, and kn = 540 uA/V2. (a) Find VOH. (b) Derive an equation for VOL that is a function of VDD, Vt, and kn/kp. (c) Evaluate the equation using the process parameters in the problem statement.

Image text
Consider a pseudo-NMOS inverter as shown in Fig. 16.21 and fabricated in a 65-nm CMOS technology for which VDD = 1.0 V, IVt| = 0.35 V, kn/kp = 5.4, and kn = 540 uA/V2. (a) Find VOH. (b) Derive an equation for VOL that is a function of VDD, Vt, and kn/kp. (c) Evaluate the equation using the process parameters in the problem statement.

Detailed Answer

0 0

Please enter your email here. You will get email when this question is answered by our tutor.

Answer
Doubtrix Logo

This Problem has been solved!

You'll get a detailed, step-by-step and expert verified solution.

Join Doubtrix with 7-days free trial

  • Icon Correct & Verified Answers
  • Icon No AI-Generated Answers
  • Icon Video Solution for Difficult Questions
  • Icon Work With Experts to Reach at Correct Answers
Login Sign Up

Similar/Related Questions

Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 5.4upCox = 540 uA/V2. In addition, QN and QP have L = 65nm and (W/L)n = 1.5. (a) Find Wp that results in VM=VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH, VOL,VIH,VIL,NML, and NMH. (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

Solution
1 0

Consider a pseudo-NMOS inverter fabricated in 0.35-um CMOS technology for which assuming lambda1 = lambda2 = 0, Vtn = -Vtp = Vt, kn = 300 uA/V2, Vt = 0.3 V, VDD = 2 V, and kn = 3kp. (a) Find VOH and VOL. (b) Evaluate the values of VOH and VOL and find the average power dissipated in the inverter, assuming it spends half the time in each of its two states.

Solution
0 0

Consider a CMOS inverter fabricated in a 65-nm CMOS process for which VDD = 1 V, Vtn = -Vtp = 0.35 V, and unCox = 2.5upCox = 470 uA/V2 . In addition, QN and QP have L = 65 nm and (W/L)n = 1.5. (a) Find Wp that results in VM = VDD/2. What is the silicon area utilized by the inverter in this case? (b) For the matched case in (a), find the values of VOH , VOL, VIH , VIL, NML, and NMH . (c) For the matched case in (a), find the output resistance of the inverter in each of its two states.

Solution
1 0